SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O-2]/([O-2] + [Ar]) O-FR = 3.0, 3.6, 4.2 and 4.8 %) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature range of similar to 350-386 A degrees C for up to 5 min. The original electron probe micro-analysis [O] contents in the as-deposited films were similar to 25, similar to 30, similar to 35 and similar to 40 % for films deposited at ([O-2]/([O-2] + [Ar]) gas flow ratios O-FR = 3.0, 3.6, 4.2 and 4.8 %, respectively. APPJ annealing increased the [O] content to similar to 35 % for films deposited at O-FR = 3.0 and 3.6 %, where the [O] content remained in similar levels for films deposited at O-FR = 4.2 and 4.8 %. Crystalline metallic Sn was identified in films as-deposited at O-FR = 3.0 and 3.6 %; on the other hand, an X-ray amorphous SnOx phase was identified in films as-deposited at O-FR = 4.2 and 4.8 %. Crystallization and oxidation by APPJ annealing improved the transmittance and blue-shifted the absorption band edge to similar to 420 nm. All APPJ-annealed films exhibit n-type conductivity that may be contributed by the mixed phases of SnO, SnO2 and a small amount of Sn.