Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.14, No.19, 1374-1376, 1995 DOI10.1007/BF00270733 Export Citation High-Quality InAlAs Grown on InP Substrates by Molecular-Beam Epitaxy at Very High Arsenic Overpressures Yoon SF, Miao YB, Radhakrishnan K, Swaminathan S Keywords:INGAAS Please enable JavaScript to view the comments powered by Disqus.
