Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.15, No.4, 311-313, 1996 DOI10.1007/BF00591647 Export Citation A Photoluminescence and Raman-Scattering Study of the Properties of Si-Doped In0.52Al0.48As Grown Lattice-Matched to InP Substrates Yoon SF, Miao YB, Radhakrishnan K Keywords:BEAM EPITAXIAL IN0.52AL0.48AS;BAND-GAP DETERMINATION;AL0.48IN0.52AS;INGAAS Please enable JavaScript to view the comments powered by Disqus.
