This paper reports on the use of AA() layers as a source of p-type dopants for laser doping processes that forms localised p+ regions on Si surfaces. Sheet resistances as low as 2 Omega/sq were demonstrated when a laser was used to scribe through a region of AAO using a speed of 500 mm/s and power of 9 W. Unlike laser-doping through spin-coated polyboron sources, it was shown that laser doping through AAO layers can be performed without introducing any voids into the Si and form a local BSF similar to 5 mu m into Si which is advantageous for PERL cell structure. This co-doping process was used to fabricate rear-passivated cells with efficiencies of up to 19.9%. However, although the heavily-doped local p+ regions could reduce R-s to values as low as 0.54 Omega cm(2), there was a penalty in terms of a high ideality factor in the V-mp -V-oc voltage range which limited FFs to similar to 76%. (C) 2015 Elsevier B.V. All rights reserved.