Bi2S3 is a promising inorganic material for thin film photovoltaic application with optimum direct band gap of similar to 1.3 eV, strong absorption coefficient, nontoxic and simple composition. Here we introduce rapid thermal evaporation (RTE), a method with simple facility and extremely fast deposition speed, to produce high quality Bi2S3 films. By optimizing the substrate temperature and post-annealing process, well crystalline, smooth and compact Bi2S3 films were obtained. The band gap, doping type and density, and photosensitivity of as-produced Bi2S3 films were revealed by a combined X-ray diffraction, Scanning electron microscopy (SEM), Raman spectrum, X-ray photoelectron spectroscopy (XPS), Energy dispersive spectroscopy (EDS), Hall effect and photoresponse measurements. Finally, a prototypical ITO/NiO/Bi2S3/Au solar cell with 0.75% power conversion efficiency was obtained, manifesting the promise of Bi2S3 as the absorber layer for thin film photovoltaics. (C) 2015 Elsevier B.V. All rights reserved.