We fabricated single-junction solar cell on molecular beam epitaxially grown p-n junction on n-type gallium arsenide (GaAs) substrate. We used a germanium (Ge)/gold (Au)/nickel (Ni)/Au metal contact from the top side on a highly doped n+ epitaxial layer as well as the bottom side on an n-type GaAs substrate. We observed 10-15% increase in solar cell power when the top contact is used for the n+ GaAs epi layer compared to the bottom side n-type GaAs substrate. Solar cell fill factor, sheet, and shunt resistances are same for both the top and bottom contact type devices. We also observed higher external quantum efficiency (EQE) for top contact devices compared to bottom contact devices. We conclude that to achieve higher power, it is advantageous to use an n-type contact from a highly doped top n+ epitaxial layer rather than a bottom n-type GaAs substrate. Published by Elsevier Ltd.