In this paper, carrier effective mobility is accurately extracted from weak to strong inversion and from ohmic to saturation regimes by pairing the split C-V technique with charge-sheet model. In weak inversion, both electron and hole effective mobility are found to be constant and V-DS independent. Moreover, effective mobility extracted by this new method is modeled in all regimes using already published models extended up to the saturation regime. (C) 2015 Elsevier Ltd. All rights reserved.