To improve the reliability of NAND Flash memory based solid-state drives (SSDs), error-prediction LDPC (EP-LDPC) has been proposed for multi-level-cell (MLC) NAND Flash memory (Tanakamaru et al., 2012, 2013), which is effective for long retention times. However, EP-LDPC is not as effective for triple-level cell (TLC) NAND Flash memory, because TLC NAND Flash has higher error rates and is more sensitive to program-disturb error. Therefore, advanced error-prediction LDPC (AEP-LDPC) has been proposed for TLC NAND Flash memory (Tokutomi et al., 2014). AEP-LDPC can correct errors more accurately by precisely describing the error phenomena. In this paper, the effects of AEP-LDPC are investigated in a 2x nm TLC NAND Flash memory with temperature characterization. Compared with LDPC-with-BER-only, the SSD's data-retention time is increased by 3.4x and 9.5x at room-temperature (RT) and 85 degrees C, respectively. Similarly, the acceptable BER is increased by 1.8x and 2.3x, respectively. Moreover, AEP-LDPC can correct errors with pre-determined tables made at higher temperatures to shorten the measurement time before shipping. Furthermore, it is found that one table can cover behavior over a range of temperatures in AEP-LDPC. As a result, the total table size can be reduced to 777 kBytes, which makes this approach more practical. (C) 2015 Elsevier Ltd. All rights reserved.