8 band (k) over right arrow . (p) over right arrow method is used to calculate subband structures of InGaAs inversion layers accounting for strong coupling between conduction and valence bands around Gamma point as well as quantum confinement. Inversion layer mobility is computed employing Kubo-Greenwood formalism. Scatterings due to acoustic phonons, polar optical phonons, ionized impurities, interface fixed charges, surface roughness, and alloy disorder are included. The simulated low-field electron mobility results are in good agreement with experimental data with and without an InP capping layer. (C) 2015 Elsevier Ltd. All rights reserved.