This work analyzes the electron mobility in few-layer MoS2-based metal-insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrodinger equations are self consistently solved using the effective mass approximation to model the six equivalent A valleys characteristic of multilayer MoS2. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the bias conditions are analyzed. A good agreement with the experimental results presented in the literature is achieved, with electron mobilities ranging between 140 and 200 cm(2) V-1 s(-1) at T = 300 K. (C) 2015 Elsevier Ltd. All rights reserved.