The effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 degrees C to 500 degrees C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction. (C) 2015 Elsevier Ltd. All rights reserved.