In this work we investigate a non-invasive, non-destructive characterization technique for monitoring the quality of film, oxide and interfaces in silicon-on-insulator (SOI) wafers. This technique is based on optical Second Harmonic Generation (SHG). The principles of SHG and the experimental setup will be thoroughly described. The experimental parameters best suited for testing SOI wafers with SHG are identified. SOI geometry, as well as the passivation of the top surface, both have an impact on the observed SHG signal. The back-gate bias applied on the substrate is shown to modulate the SHG signal. (C) 2015 Elsevier Ltd. All rights reserved.