In this article, we report (I-DS-V-DS) characteristics of (75 and 35 nm) p-type ZnTe thin-film transistors (TFTs) at different active channels by photolithography. In 75 nm p-ZnTe TFTs, the source and drain contacts were doped with Cu in 11, 13 and 15 mg (Cu(NO3)(2)-3H(2)O)/150 ml (H2O) for 60 s and heated at 300 degrees C for 10 min. TFTs immersed in 15 mg solution showed the clearest linear and saturation regions, as well as an approximate mobility from 10(-2) to 10(-4) cm(2)/V s. Also, drain-currents (I-DS) from 10(-8) to similar to 10(-7) A were shown at V-G = 0 V (OFF-state). However, drain-current in the OFF-state decreased in 35 nm p-ZnTe TFTs. The films showed the cubic phase and the Cu1.44Te-like orthorhombic phase. (C) 2015 Elsevier Ltd. All rights reserved.