In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength similar to 5.2 mu m at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, similar to 2 x 10(10) cm Hz(1/2)/W at 230 K, under reverse bias 100 mV and similar to 4 x 10(9) cm Hz(1/2)/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates. (C) 2016 Elsevier Ltd. All rights reserved.