Previous Article Next Article Table of Contents Solid-State Electronics, Vol.119, 50-50, 2016 DOI10.1016/j.sse.2016.01.011 Export Citation High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications (vol 105, pg 6, 2015) Golshani N, Derakhshandeh J, Beenakker CIM, Ishihara R Please enable JavaScript to view the comments powered by Disqus.
