High-performance transparent bottom-gate gallium-doped zinc-oxide thin-film transistors (GZO TFTs) have been fabricated on a glass substrate at a low temperature. All process temperatures were below 100 degrees C. For V-G = -5 to 10 V, the TFTs exhibited excellent properties such as a saturation mobility mu sat of 65.57 cm(2)/(V.s), a linear field effect mobility mu fe of 20.56 cm(2)/(V.s), a threshold voltage V-th of 2.2 V, a steep subthreshold swing of 166 mV/decade, a low off-state current I-off of 5 x 10(-12) A, a high on/off current ratio of 1.5 x 10(7), a small contact resistance between the active layer and the S/D electrode, and a high transmittance greater than 80%. These results demonstrate that excellent device performance can be realized in GZO TFTs. (C) 2015 Elsevier B.V. All rights reserved.