Cu2O/Fe-O heterojunction solar cellswere successfully fabricated by electrodeposition method. The as-deposited thin film exhibited signature Raman peaks associated to gamma-FeOOH. By thermal annealing in air at 100-400 degrees C, different Fe2O3 polymorphs were produced. Both as-deposited and annealed Fe-O films showed n-type conductivity with approximated band gap of 2.1-2.3 eV. Resistivity was similar to 680 Omega cm for gamma-FeOOH and >700 Omega cm for Fe2O3 films. Cu2O as the p-type layer was partnered with as-deposited and annealed Fe-O thin films to fabricate different heterojunctions based on Fe oxides compounds. Remarkably, all the fabricated Cu2O/Fe-O heterostructures exhibited photovoltaic characteristics (open circuit voltage, V-OC=38-108 mV and short circuit current density, J(SC) = 0.74-1.58 mA/cm(2)), although no appreciable differences were found on their solar cell parameters. The present results strongly suggest the potential of Fe-O based semiconductors for solar cell fabrication. (C) 2015 Elsevier B.V. All rights reserved.