This work includes the results of growth rate of the silicon nitride layers and layers of carbon doped nitrogen deposition on ( 001) Si substrate as a function of time in the process of chemical vapor deposition, assisted with the plasma generated by radio frequency waves RF CVD (13,56MHz, 300 W). On the basis of measurements of thickness of the layers it was observed that kinetic curves are not linear but consist of stages, which regularly recur and are characterized at first by the rapid growth rate and then by slowing down at the end of each stage. The spectroscopic ellipsometry investigations allowed us to determine layer thickness and optical constants parameters, versus deposition time. The obtained results allow us to conclude that the growth process within this systemis limited by the number of active centers on the substrate surface, and at the next stages, on the surface of growing layers. A possible mechanism based on the theory on of transition state has been discussed. (C) 2016 Elsevier B.V. All rights reserved.