The investigation of heterojunctions based on. conductive polymer PPA or PAN and InSe has been reported. The temperature dependence of the saturation current was carried out to obtain. the barrier height of the investigated structures. The barrier height phi(0) has been found to be equal to 0.6eV and 0.83eV for InSe-PPA and InSe-PAN, respectively. For the InSe-PPA heterostructure, the higher power conversion efficiency than that for the InSe-PAN heterostructure at a light intensity of 50 mW/cm(2) has been, obtained.