Photovoltaic properties of new photosensitive p-n type heterostructures based oil N,N'-dimethyl perylene-tetracarboxylic acid diimide and organic [pentacene, hexathiopentacene, lead phthalocyanine] and inorganic [CuI] semiconductors are investigated. The basic attention is focused on the influence of energy diagram parameters and substrate temperatures (T-s) during the deposition on the photosensitivity of heterostructures. The maximal photovoltage, minimal surface recombination rate, and structural homogeneity of layers for the heterostructures were obtained at T-s = 370 K. The comparison of the obtained results with energy diagram parameters according to the Anderson model (without taking surface states into account) shows a qualitative agreement for two-layered organic p-n heterojunctions.