We fabricated bottom emission organic light emitting diode (OLED) by using high work function material anode with sputtering method and investigated their electrical properties. Nickel oxide (NiO) was found to reach about 5.2 eV, much higher than those of other oxide metal and indium tin oxide (ITO). The bottom emission OLED using a thin oxidation of nickel oxide layer upon ITO as an anode and an Al layer as a cathode has been fabricated. Device performance was found to improve greatly due to an efficient hole injection from nickel oxide; moreover, the transmittance of NiO-ITO was nearly same as the transmittance of ITO.