By doping 1,1-dimethyl-2,5-bis(N, N-dimethylaminophenyl)-3,4-diphenylsilole (silole-A) in poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT), an improved photoconductive characteristics was observed for a single layer organic device fabricated by a spin-coating process. A maximum external quantum efficiency (EQE) was 8.9% at -20 MV/m when the ratio of silole-A: F8BT was 75 mol%. The EQE of the reference device with F8BT only was 0.06%, and the highest EQE was approximately 160 times higher than that of the reference device. In addition, the photoluminescence (PL) quantum efficiency of the silole-A: F8BT neat film was lower than those of silole-A and F8BT neat films. The lower PL quantum efficiency indicates that the photo-induced carriers efficiently dislocate in the organic layer, resulting in the high EQE of organic photoconductive device.