Ion-beam irradiation (IB) on HfO2 surface induced high-performance liquid crystal (LC) driving at a 1-V threshold with vertical alignment of liquid crystals (LC). The high-k materials Atomic layer deposition was used to obtain LC orientation on ultrathin and high-quality films of HfO2 layers. To analyze surface morphological transition of HfO2 which can act as physical alignment effect of LC, atomic force microscopy images are employed with various IB intensities. The contact angle was measured to elucidate the mechanism of vertical alignment of LC on HfO2 with IB irradiation. Contact angle measurements show the surface energy changes via IB intensity increasing.