Indium zinc tin oxide (IZTO) thin films were prepared by a facing targets sputtering (FTS) system under various substrate temperature conditions, from R. T to 300 degrees C. The dependence of their electrical, optical and structural properties on the substrate temperature was investigated by a Hall Effect measurement system, a UV/VIS spectrometer, an X-ray diffractometer (XRD) and an atomic force microscope (AFM). The X-ray diffraction measurements showed that amorphous IZTO films were formed regardless of substrate temperatures. The lowest value of the resistivity was 4.18 x 10(-4) [Omega.cm] at a substrate temperature of 100 degrees C. All the IZTO thin films deposited showed an average transmittance of over 80% in the visible range.