For the application to transparent electrode in flexible dye-sensitized solar cells (DSSCs), Zn-doped In2O3 (In2O3:Zn) thin films have been fabricated on polyethylene naphthalate (PEN) substrate by the radio frequency facing target sputtering method, and their characteristics have been investigated as a function of deposition pressure. X-ray diffraction study reveal that the structure of In2O3:Zn thin films is amorphous nature. The film morphology is slightly sensitive to the deposition pressure. At the sputtering pressure of 0.40 Pa, In2O3:Zn thin film on PEN exhibits a sheet resistance of about 12.4 Omega/square and average transmittance of about 85% at 550 nm wavelength, resulting in the highest value for figure of merit. The flexible DSSC device with the In2O3:Zn electrode shows the efficient solar-to-electrical power conversion efficiency (eta), which is the maximum eta value of 4.6% under simulated air mass 1.5 irradiation (100mW/cm(2)).