Cd2SnO4(CTO) thin film was made using RF magnetron sputtering and a single (CTO) target. Among various deposition variables, the effect of changes in plasma power on the electrical and optical properties of the film was investigated. It was observed, as plasma power grows, specific resistivity of the thin film increases while transmittance considerably decreases. It was found that such a phenomenon occurred because of the density of the thin film reduced by increased deposition speed. Another noteworthy result obtained through the X-ray photoelectron spectroscopy analysis is that Sn has metallic bond in the case of the thin film deposited under high power. It seems that existence of such metal was another cause of the reduced transmittance of the thin film.