The hydrogenated amorphous silicon p-i-n solar cells have been deposited on indium tin oxide glass by using the PECVD. Solar cells were fabricated with various thicknesses [50-300 nm] of the i-layer, while the thicknesses of the p- and n-layer were fixed to 25 nm and 50 nm, respectively. The solar simulator shows the highest value of short-circuit current density and efficiency that are of 6.32 mA/cm(2) and 1.36%, respectively for the solar cell with a thickness of 200 nm and the open-circuit voltage is the highest value when thickness of the i-layer is 150 nm.