This article shows the characteristics of pin-type solar cells with different radio frequency (RF) power and substrate temperature (T-s). All films of amorphous materials were deposited by 13.56MHz plasma enhanced chemical vapor deposition (PECVD) method using a mixture of silane (SiH4) and hydrogen (H-2). The SiH4 gas was used as a gas source and the doping process was done by gas admixture of 3% diborane (B2H6) diluted in hydrogen (H-2) and 1% phosphine (PH3) diluted in H-2 for p- and n-layer, respectively. The effects of deposited parameters on the characteristics of a-Si:H films have been investigated by field emission scanning electron microscope (FE-SEM), dark- and photo-conductivity (sigma(d) and sigma(ph)) measurement and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer, respectively. The results showed that the deposition rate of a-Si:H films increased with increasing of RF power and T-s. The optical band gap (E-opt) of a-Si:H films was increased with increasing of RF power from 20-60 Watt, and slightly decreased at RF power of 60-100 Watt. The various values of open-circuit voltage (V-oc), short-circuit current density (J(sc)), and conversion efficiency were measured by the solar simulator. It was found that a-Si:H films deposited at RF power of 60 Watt and T-s of 200 degrees C are better suited for thin-film silicon solar cell application.