La0.5Sr0.5CrO3 세라믹스의 전기전도특성

정우환; Woo-Hwan Jung

Korean Journal of Materials Research, Vol.26, No.1, 35-41, January, 2016

DOI10.3740/MRSK.2016.26.1.35 Export Citation

La0.5Sr0.5CrO3 세라믹스의 전기전도특성

Electrical Transport Properties of La0.5Sr0.5CrO3 Ceramics

정우환^†

호원 대학교 전기공학부

Woo-Hwan Jung^†

Division of Electrical Engineering, Howon University, Gunsan, Junbuk 54058, Korea

E-mail:

The electrical transport properties of La0.5Sr0.5CrO3 below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below TC, La0.5Sr0.5CrO3 contains a dielectric relaxation process in the tangent loss and electric modulus. The La0.5Sr0.5CrO3 involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in La0.5Sr0.5CrO3 indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

Keywords:dielectric relaxation;electron - magnon interaction;electron-phonon interaction;small polaron;spin polaron.

[References]

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[2] Crandles DA, Timusk T, Garrett JD, Greedan JE, Phys. Rev. B, 49, 16207 (1994)

[3] Okada Y, Arima T, Tokura Y, Murayama C, Mori N, Phys. Rev. B, 48, 9667 (1993)

[4] Ju HL, Eylem C, Peng JL, Eichhorn BW, Greene RL, Phys. Rev. B, 49, 13335 (1994)

[5] Onoda M, Yasumoto M, J. Phys. Condens. Matter, 9, 3861 (1997)

[6] Onoda M, Yasumoto M, J. Phys. Condens. Matter, 9, 5623 (1997)

[7] Katsufuji T, Taguchi Y, Tokura Y, Phys. Rev. B, 56, 10145 (1997)

[8] Akaki O, Chaninani A, Yokoya T, Fujisiwa H, Takahashi T, Onoda M, Phys. Rev. B, 56, 12050 (1998)

[9] Shanthi N, Sarma DD, Phys. Rev. B, 57, 2153 (1998)

[10] Yamaguchi S, Okimoto Y, Tokura Y, Phys. Rev. B, 54, R11022 (1996)

[11] Iguchi E, Ueda K, Jung WH, Phys. Rev. B, 54, 17431 (1996)

[12] Abbate M, de Groot FMF, Fuggle JC, Fujimori A, Strebel O, Lopez F, Domke M, Kaindle G, Sawatzky GA, Takano M, Takeda Y, Eisaki H, Uchida S, Phys. Rev. B, 46, 4511 (1992)

[13] Abbate M, Fuggle JC, Fujimori A, Tjeng LH, Chen CT, Potze R, Sawatzky GA, Eisaki H, Uchida S, Phys. Rev. B, 47, 16124 (1992)

[14] Tezuka K, Hinatsu Y, Nakamura A, Inami T, Shimojo Y, Morii Y, J. Solid State Chem., 141, 404 (1998)

[15] Tyson TA, de Leon JM, Conradson SD, Bishop AR, Neumeier JJ, Roder H, Zang J, Phys. Rev. B, 53, 13958 (1996)

[16] Karim DP, Aldred AT, Phys. Rev. B, 20, 2255 (1979)

[17] Weber WJ, Griffin CW, Bates JL, J. Am. Ceram. Soc., 70, 265 (1987)

[18] Marsh DB, Parris PE, Phys. Rev. B, 54, 7720 (1996)

[19] Devi PS, Rao MS, J. Solid State Chem., 98, 237 (1992)

[20] Park SK, Ishikawa T, Tokura Y, Li JQ, Matsui Y, Phys. Rev. B, 60, 10788 (1999)

[21] Ishikawa T, Park SK, Katsufuji T, Arima T, Tokura Y, Phys. Rev. B, 58, R13332 (2000)

[22] Lee YP, Prokhorov VG, Rhee JY, Kim KW, Kaminsky GG, Fils VS, J. Phys. Condens. Matter, 12, L133 (2000)

[23] Sarma DD, Maiti K, Vescovo E, Carbone C, Eberhardt W, Rader O, Gudat W, Phys. Rev. B, 20, 13369 (1996)

[24] Bansal KP, Kumari S, Das BK, Jain GC, J. Mater. Sci., 18, 2095 (1983)

[25] Mansingh A, Reyes JM, Sayer M, J. Non-Cryst. Solids, 7, 12 (1972)

[26] Seeger A, Lunkenheimer P, Hemberger J, Mukhin AA, Ivanov VY, Balbasov AM, Loid A, J. Phys. Condens. Matter, 11, 3273 (1999)

[27] Jhnas H, Kim D, Rasmussen RJ, Honig JM, Phys. Rev. B, 54, 11224 (1996)

[28] Bajpai PK, Singh KN, Physica B, 406, 1226 (2001)

[29] Kumar P, Singh BP, Sinha TP, Singh NK, Physica B, 406, 139 (2001)

[30] Howell FS, Bose RA, Macedo PB, Moynihan CT, J. Phys. Chem., 78, 639 (1974)

[31] Mahamoud H, Louati B, Hlel F, Guidara K, J. Alloy. Compd., 509, 6083 (2011)

[32] Liu XQ, Yang WZ, Song CL, Chen XM, Appl. Phys. A-Mater. Sci. Process., 100, 1131 (2010)

[33] Mahato DK, Dutta A, Sinha TP, J. Mater. Sci., 45(24), 6757 (2010)

[34] Saha S, Sinha TP, Phys. Rev. B, 65, 134102 (2002)

[35] Idrees M, Nadeem M, Hassan MM, J. Phys. D-Appl. Phys., 43, 155401 (2010)

[36] Dutta A, Sinha TP, Physica B, 405, 1475 (2010)

[37] Jung WH, J. Appl. Phys., 90, 2455 (2001)

[38] Levstik A, Filipic C, Bobnar V, Drnovsek S, Holc J, Kosec M, Physica B, 405, 4271 (2010)

[39] Emin D, Holstein T, Ann. Phys., 53, 439 (1969)

[40] Archibald W, Zhou JS, Goodenough JB, Phys. Rev. B, 53, 14445 (1996)

[41] Culter M, Mott NF, Phys Rev., 181, 1336 (1969)

[42] Austin IG, Mott NF, Adv. Phys., 18, 41 (1969)