Single-Crystal-Like Organic Thin-Film Transistors Fabricated from Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) Precursor-Polystyrene Blends

Hamaguchi A; Negishi T; Kimura Y; Ikeda Y; Takimiya K; Bisri SZ; Iwasa Y; Shiro T

Advanced Materials, Vol.27, No.42, 6606-6606, 2015

DOI10.1002/adma.201502413 Export Citation

Single-Crystal-Like Organic Thin-Film Transistors Fabricated from Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) Precursor-Polystyrene Blends

Hamaguchi A, Negishi T, Kimura Y, Ikeda Y, Takimiya K, Bisri SZ, Iwasa Y, Shiro T

High-mobility short-channel organic thin-film transistors fabricated using a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene (DNTT) precursor (5,14-N-phenylmaleimide DNTT, endo-isomer-rich fraction) and polystyrene (PS) blends are reported. The DNTT grains are "single-crystal"-like and the field-effect mobility of the devices ranges up to 4.7 cm(2) V-1 s(-1). The PS layer functions as a hydrophobic passivation layer on the Si/SiO2 substrate.