Advanced Materials, Vol.27, No.47, 7767-7774, 2015
In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device
Tian H,
Zhao HM,
Wang XF,
Xie QY,
Chen HY,
Mohammad MA,
Li C,
Mi WT,
Bie Z,
Yeh CH,
Yang Y,
Wong HSP,
Chiu PW,
Ren TL
