Advanced Materials, Vol.27, No.40, 6170-6175, 2015
Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3-xClx Perovskite for Resistive Random Access Memory Devices
The CH(3)NH(3)PbI(3-x)Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/ CH3NH3PbI3-xClx/FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.