화학공학소재연구정보센터
Chemical Physics Letters, Vol.648, 53-59, 2016
Electron density topography based model to explore N-methyl-D-aspartate receptor channel blockers
The dwell time of a molecule in a voltage dependent NMDA receptor channel is an important factor in defining its activity as channel blocker. A model has been designed, based on quantum chemical descriptors like geometrical parameters, charge distribution, electron density topography and global reactivity descriptors, to shed lights on the dwell time of a channel blocker. Structure and charge distribution studies indicate polarization of molecules with the electron density located at the core of the molecule. Electron density topography reveals ring critical point (prep), emerging as a signature parameter to understand the dwell time of a channel blocker molecule. (C) 2016 Elsevier B.V. All rights reserved.