Copper Ion-containing Ionic Liquids Provide Improved Endurance and Switching Voltage Distributions of Conducting-bridge Random Access Memory

Harada A; Yamaoka H; Watanabe K; Kinoshita K; Kishida S; Fukaya Y; Nokami T; Itoh T

Chemistry Letters, Vol.44, No.11, 1578-1580, 2015

Harada A, Yamaoka H, Watanabe K, Kinoshita K, Kishida S, Fukaya Y, Nokami T, Itoh T

Remarkable improvement of cycling endurance and working voltage variance has been achieved by the addition of a trace amount of a [bmim][Tf2N] solution containing Cu(Tf2N)(2) to the HfO2 film layer of a CB-RAM with a Cu/HfO2/Pt structure.