- Previous Article
- Next Article
- Table of Contents
Current Applied Physics, Vol.15, S35-S39, 2015
Catalyst-free heteroepitaxial growth of very long InAs nanowires on Si
Catalyst-free, very long InAs nanowires (NWs) are grown on a Si (111) substrate by using metal-organic chemical vapor deposition (MOCVD) system and their growth mechanism is studied. The NW height increases very fast in the beginning of the growth because of the mass-transport contribution of the adatoms from the substrate surface to the NW tip. Then, the NWs grow slowly and consistently until their height exceeds 50 gm. The NW diameter is very uniform along the growth axis regardless of the NW height and this clearly differs from that of the NWs grown via the self-catalyzed vapor liquid solid method. A transmission line measurement (TLM) is performed on the very long InAs NW to measure the contact resistance between the NW and the metal electrode. The electrical properties of the NW are further examined. The catalyst-free, very long InAs NWs demonstrated here can be used for an interconnection of the nanoelectronic device array by integrating multiple devices on a single NW. (C) 2015 Elsevier B.V. All rights reserved.