We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the "n(+)" source/drain regions and "p(+)" body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of similar to 50.0 V, an average ON-resistance of 48.7 m Omega-mm(2) and a peak transconductance of 53.6 mu S/mu m similar to that of a comparable LDMOS. (C) 2015 Elsevier B.V. All rights reserved.