The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

Kim TW; Jung M; Lee DU; Kim HJ; You YS; Cho JW; Yoo KH; Lee JY; Kim MD

Journal of Materials Science Letters, Vol.19, No.9, 755-757, 2000

DOI10.1023/A:1006735815624 Export Citation

The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

Kim TW, Jung M, Lee DU, Kim HJ, You YS, Cho JW, Yoo KH, Lee JY, Kim MD

Keywords:2-DIMENSIONAL ELECTRON-GAS;TRANSISTOR STRUCTURES;EDGESINGULARITY;PHOTOLUMINESCENCE;ALGAAS/INGAAS/GAAS;MAGNETOTRANSPORT;HETEROSTRUCTURES;HETEROJUNCTIONS;SUBBAND;SPECTRA