Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

Cha CL; Chor EF; Gong H; Chan L

Journal of Materials Science Letters, Vol.19, No.9, 817-821, 2000

DOI10.1023/A:1006745528344 Export Citation

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

Cha CL, Chor EF, Gong H, Chan L