C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH3SiH3 is exposed at 250 degrees C to 500 degrees C to a Ge on Si (100) substrate using H-2 or N-2 carrier gas followed by a Ge cap layer deposition. At 350 degrees C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N-2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 degrees C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH3SiH3 is adsorbed on the Ge surface without decomposing the C-Si bond. On the other hand, by using H-2 as carrier gas, lower incorporated C is observed in comparison to Si. CH3SiH3 injected with H-2 carrier gas is adsorbed on Ge without decomposing the C-Si bond and the adsorbed C is reduced by dissociation of the C-Si bond during temperature ramp up to 550 degrees C. The adsorbed C is maintained on the Ge surface in N-2 at 550 degrees C. (C) 2015 Elsevier B.V. All rights reserved.