Iodotrifluoromethane (CF3I) gas is one of the environmentally conscious perfluorocarbon gases because it has a very low global warming potential. The authors have found that CF3I gas plasma drastically reduces ultraviolet (UV) photon irradiation of similar to 4.0 eV, which corresponds to the excitation energy at silicon dioxide (SiO2)/silicon (Si) interfaces, in comparison with octafluorocyclobutane (C4F8) gas. This results in reducing UV irradiation damage in dielectric film etching processes, which was experimentally confirmed by evaluating charge-pumping currents in metal insulator semiconductor field effect transistors fabricated by using CF3I gas etching. They have also demonstrated that a novel etching method using pulse-time modulation of CF3I gas plasma for the first time further reduced UV light irradiation damage. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3428541]