In a planar configuration, multiple electrical connections to a single molecule require an atomic scale precision of the wiring and an atomically flat supporting surface. Current nanofabrication techniques cannot achieve this on the same surface of a wafer. A double sided interconnection process flow adopted from sensor technology is presented using silicon on insulator substrates. The top part of the wafer is exclusively reserved for atomic scale interconnect and constructions. The back side is reserved for all the other interconnection steps. To ensure the passage between the back and the top side of the wafer, nanoscale vias are fabricated through the full thickness of the wafer. The top end of each via is boron and phosphorus doped, and the interconnection leakage current-voltage characteristics are measured. At low voltage and for top inter-via distances in the 30-50 nm range, a high gigaohm range resistance is obtained. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3484248]