화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.28, No.6, C6J1-C6J7, 2010
Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography
Rigorous electromagnetic field simulations are applied to investigate phase effects in the light diffraction from masks for advanced optical and extreme ultraviolet lithography. Analogies of these phase effects with wave aberrations of the projection lens and their impact on the lithographic process performance are discussed. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3497024]