The fabrication and measurements of platinum single-electron transistors (SETs) employing high quality insulating barriers produced by atomic layer deposition (ALD) of alumina (Al(2)O(3)) are reported. The G-V(ds), Coulomb blockade oscillations, and the charging diagram of the SET at 300 mK were successfully measured. The ALD technique provides atomic accuracy and precise control of the tunnel barriers and greatly expands the choice of materials suitable for SET fabrication (both electrodes and island materials as well as barrier dielectrics). This fabrication method is targeted toward large scale production of SETs, which will accelerate their adoption into practical applications. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3511432]