Ru-Ta alloy was investigated as the diffusion barrier layer in Cu dual damascene interconnects, and Cu filling property and reliability performances with RuTa/RuTa(N) stacked barrier structure were mainly evaluated. RuTa strongly orientated to Ru(002) and the lattice misfit between Ru(002) and Cu(111) was lower than that between Ta(110) and Cu(111). The wettability of Cu seed on RuTa was much better than that on Ta. The barrier property against Cu diffusion of RuTa/RuTa(N) stacked barrier structure kept the equivalent barrier property of conventional Ta/TaN one. Filling property of Cu electroplating was improved by using Ru-Ta alloy barrier, and trenches of 45 nm in width could be filled successfully due to the suppression of the agglomeration of Cu seed on the sidewall of trench. Via resistance with RuTa/RuTa(N) barrier was much lower than that with Ta/TaN one due to its low resistivity. The estimated life time of via electromigration with RuTa/RuTa(N) barrier was longer than that with Ta/TaN one because of the good wettability and filling property inside via. Consequently, Cu filling property and reliability performance can be improved with RuTa/RuTa(N) stacked barrier structure in Cu interconnects. (C) The Author(s) 2016. Published by ECS. All rights reserved.