We present a new ternary semiconductor absorber material - Ag3SbS3 - for solar cells. Ag3SbS3 nanoparticles were grown on mesoporous TiO2 electrodes using a two-stage successive ionic layer adsorption reaction process. Post annealing transformed the double-layered structure into the Ag3SbS3 phase. The energy gap of the synthesized Ag3SbS3 nanoparticles is estimated to be similar to 1.5-1.7 eV. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized nanoparticles using a polysulfide electrolyte. The best cell yielded a short-circuit current density J(sc) of 11.47 mA/cm(2), an open-circuit voltage V-oc of 0.33V, a fill factor FF of 38.92%, and a power conversion efficiency eta of 1.47% under 1 sun. The external quantum efficiency (EQE) spectrum covered the spectral range of 300-850 nm with a maximal EQE = 80% at lambda = 500 nm. At the reduced light intensity of 13% sun, the eta increased to 2.18% with J(sc) = 2.46 mA/cm(2) (which could be normalized to 18.9 mA/cm(2)). The respectable photovoltaic performance indicates that Ag3SbS3 could be a potential solar absorber material. (C) The Author(s) 2016. Published by ECS.