Lead-free sodium bismuth titanate-aluminate bismuth [0.97(Na0.5Bi0.5)TiO3-0.03BiAlO(3)] solid-solution films deposited on (100) Pt/TiO2/SiO2/Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725 degrees C with a pyrolysis temperature of 410 degrees C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P(r) of 38 C/cm(2) and a leakage current density of 10(-7)-10(-6) A/cm(2) (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers.