RTCVD 반응기에서 Ni 촉매를 이용한 탄소나노튜브의 성장

모영환; 박기수; 박상호; 남기석; Young Hwan Mo; Ki Su Park; Sang Ho Park; Kee Suk Nahm

HWAHAK KONGHAK, Vol.38, No.5, 683-690, October, 2000

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RTCVD 반응기에서 Ni 촉매를 이용한 탄소나노튜브의 성장

Growth of Carbon Nanotubes Using Ni Catalysts in RTCVD Reactor

모영환, 박기수, 박상호, 남기석 ^†

전북대학교 공과대학 화학공학부, 전주 561-756

Young Hwan Mo, Ki Su Park, Sang Ho Park, and Kee Suk Nahm^†

School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea

E-mail:

초록

RTCVD(rapid thermal chemical vapor deposition) 반응기에서 Ni 촉매를 이용하여 탄소나노튜브(carbon nanotube, CNT)를 성장시켰다. 탄소나노튜브의 최적성장조건을 찾기 위하여 촉매 기판의 종류, 성장온도와 시간, 촉매의 함량, 희석기체의 종류를 변환시켜가며 성장하여 그 특성을 분석하였다. 그 결과 Ni/Al₂O₃ 디스크형 펠렛을 기판으로 사용하여 아세틸렌(C₂H₂) 원료기체와 수소(H₂) 희석기체를 각각 10 sccm과 100 sccm을 공급하면서 600 ℃, 1 torr에서 30분 동안 성장시킬 때 탄소나노튜브가 가장 잘 성장함을 알 수 있었다. 성장된 탄소나노튜브는 단일벽 탄소나노튜브(single-wall carbon nanotube, SWNT)였다. 성장 중 반응기 내의 기체를 분석한 결과 성장온도에서 C₂H₂가 기상에서 분해되어 탄소나노튜브의 성장에 참여하는 것이 아니고 C₂H₂ 기체 분자가 Ni 촉매 표면에 흡착된 후 탄소 원자로 분해되어 탄소나노튜브 성장반응에 참여하는 것임을 알 수 있었다.

Carbon nanotubes were grown using nickel catalyst in a rapid thermal chemical vapor deposition(RTCVD) reactor. The optimum growth condition of carbon nanotubes was examined as functions of catalyst type, growth temperature and time, catalyst content, and dilution gas. It was observed that large amount of carbon nanotubes was grown on a Ni/Al₂O₃ disctype pellet at 600 ℃ and 1 torr for 30 min with 10 sccm C₂H₂ and 100 sccm H₂, respectively. The grown nanotubes were identified to be a single-wall carbon nanotube. The gas analysis during the growth showed that C₂H₂ was not decomposed in gas phase at the growth temperature. The C₂H₂ molecules were directly adsorbed on the surface of nickel catalyst and decomposed into carbon atoms which participated in the growth of carbon nanotubes.

Keywords:Carbon Nanotube;Nickel Tip;Mass Spectrum;Growth Mechanism

[References]

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Han W, Bando Y, Kurashima K, Sato T, Jpn. J. Appl. Phys., 38, L755 (1999)
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Iijima S, Ajayan PM, Ichihashi T, Phys. Rev. Lett., 69, 3100 (1992)
Iijima S, Mater. Sci. Eng., B19, 172 (1993)
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[Referenced By]

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[1] Iijima, Nature, 354, 56 (1991)

[2] Sauvajol JL, Anglaret E, Rols S, Journet C, Goze C, Bernier P, Maser WK, Munoz E, Benito AM, Martinez MT, Coddens G, Dianoux AJ, Synth. Met., 103(1-3), 2537 (1999)

[3] Hassanien A, Tokumoto M, Kumazawa Y, Kataura H, Maniwa Y, Suzuki S, Achiba Y, Appl. Phys. Lett., 73(26), 3839 (1998)

[4] Saito Y, Hamaguchi K, Hata K, Tohji K, Kasuya A, Nishina Y, Uchida K, Tasaka Y, Ikazaki F, Yumura M, Ultramicroscopy, 73, 1 (1998)

[5] Che G, Lakshmi BB, Fisher ER, Martin CR, Nature, 393(28), 346 (1998)

[6] Soh HT, Quate CF, Morpurgo AF, Marcus CM, Kong J, Dai H, Appl. Phys. Lett., 75(5), 627 (1999)

[7] Nutzenadel C, Zuttel A, Chartouni D, Schlapbach L, Electrochem. Solid-State Lett., 2(1), 30 (1999)

[8] Han W, Bando Y, Kurashima K, Sato T, Jpn. J. Appl. Phys., 38, L755 (1999)

[9] Wong EW, Maynor BW, Burns LD, Lieber CM, Chem. Mater., 8, 2041 (1996)

[10] Iijima S, Ajayan PM, Ichihashi T, Phys. Rev. Lett., 69, 3100 (1992)

[11] Iijima S, Mater. Sci. Eng., B19, 172 (1993)

[12] Thess A, Lee R, Nikolaev P, Dai HJ, Petit P, Robert J, Xu CH, Lee YH, Kim SG, Rinzler AG, Colbert DT, Scuseria GE, Tomanek D, Fischer JE, Smalley RE, Science, 273(5274), 483 (1996)

[13] Munoz E, Maser WK, Benito AM, delaFuente GF, Martinez MT, Synth. Met., 103, 2490 (1999)

[14] Li W, Zhang H, Wang C, Zhang Y, Xu L, Zhu K, Xie S, Appl. Phys. Lett., 70(20), 2684 (1997)

[15] Yudasaka M, Kikuchi R, Matsui T, Ohki Y, Yoshimura S, Ota E, Appl. Phys. Lett., 67(17), 2477 (1995)

[16] Huang ZP, Wu JW, Ren ZF, Wang JH, Siegal MP, Provencio PN, Appl. Phys. Lett., 73(26), 3845 (1998)

[17] Ren ZF, Huang ZP, Wang DZ, Wen JG, Xu JW, Wang JH, Calvet LE, Chen J, Klemic JF, Reed MA, Appl. Phys. Lett., 75(8), 1086 (1999)

[18] Seo YH, Nahm KS, Suh EK, Lee HJ, Hwang YG, J. Vac. Sci. Technol. A, 15(4), 2226 (1997)

[19] Ren ZF, Huang ZP, Xu JW, Wang JH, Bush P, Siegal MP, Provencio PN, Science, 282(5391), 1105 (1998)

[20] Lee CJ, Kim DW, Lee TJ, Choi YC, Park YS, Kim WS, Lee YH, Choi WB, Lee NS, Kim JM, Choi YG, Yu SC, Appl. Phys. Lett., 75(12), 1721 (1999)

[21] Bandow S, Asaka S, Phys. Rev. Lett., 80, 3779 (1998)

[22] Pimenta MA, Marucci A, Empedocles SA, Bawendi MG, Hanlon EB, Rao AM, Eklund PC, Smalley RE, Dresselhaus G, Dresslhaus MS, Phys. Rev., B, Condens. Matter, 58, R16016 (1998)

[23] Pocsik I, Hundhausen M, Koos M, Ley L, J. Non-Cryst. Solids, 227, 1083 (1998)

[24] Rao AM, Richter E, Bandow S, Chase B, Eklund PC, Williams KA, Fang S, Subbaswamy KR, Menon M, Thess A, Smalley RE, Dresselhaus G, Dresselhaus MS, Science, 275(5297), 187 (1997)

[25] Rao AM, Jorio A, Pimenta MA, Dantas MSS, Saito R, Dresselhaus G, Dresselhaus MS, Phys. Rev. Lett., 84(8), 1820 (2000)

[26] Cooper CA, Young RJ, J. Raman Spectrose., 30, 929 (1999)

[27] Hafner JH, Cheung CL, Lieber CM, J. Am. Ceram. Soc., 121(41), 9750 (1999)

[28] Cassell AM, Raymakers JA, Kong J, Dai HJ, J. Phys. Chem. B, 103(31), 6484 (1999)

[29] Laurent C, Flahaut E, Peigney A, Rousset A, New J. Chem., 1229 (1998)

[30] Terrones M, Hsu WK, Kroto HW, Walton DRM, Topics Current Chem., 199, 189 (1999)

[31] Lee YH, Kim SG, Tomanek D, Phys. Rev. Lett., 78(12), 2393 (1997)

[32] Fahmi A, vanSanten RA, Surf. Sci., 371, 53 (1997)

[33] Bao S, Hofmann P, Schindler KM, Fritzsche V, Bradshaw AM, Woodruff DP, Casado C, Asensio MC, J. Phys. Condens. Matter, 6, L93 (1994)

[34] Abdelrehim IM, Thornburg NA, Sloan JT, Caldwell TE, Land DP, J. Am. Chem. Soc., 117(37), 9509 (1995)

[35] Crescenzi LMD, Marucci M, Gunnella R, Castrucci P, Casalboni M, Dufour G, Rochet F, Surf. Sci., 426, 277 (1999)

[36] Weyher J, Mater. Sci. Eng., 43, 235 (1978)