The new bismuth chalcogenide La(0.9)2Bi(1.08)S(3) crystallizes in the. monoclinic space group C2/m with a = 28.0447(19) angstrom, b = 4.0722(2) angstrom, c 14.7350(9) angstrom, and beta = 118.493(5)degrees. The structure of La0.92B1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of similar to 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.