In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm(2) is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area. (C) 2016 Elsevier B.V. All rights reserved.