화학공학소재연구정보센터
Advanced Materials, Vol.28, No.16, 3216-3222, 2016
Electric and Photovoltaic Behavior of a Few-Layer alpha-MoTe2/MoS2 Dichalcogenide Heterojunction
Mo-based van der Waals heterojunction pDn diodes with p-type alpha-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3), ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.